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有机半导体薄膜晶体管 (OTFT)

有机半导体薄膜晶体管(OTFT)的优点

Category a-Si on Glass LTPS on Plastic OTFT on Film
Process Temp. 300 °C 250 °C 100 °C
Process CVD, Dry Etcher, PVD
Sheet by Sheet process
CVD, Dry Etcher, PVD
Sheet by Sheet process
Wet(Liquid) coating and development
Roll to Roll process
No. of Mask 4~5 7~11 4~5
Mobility 0.1 ~ 1.0 cm2/Vsec 20 ~ 100 cm2/Vsec 0.5 ~ 4 cm2/Vsec
Off Current(A) >10-12 10-14~10-12 >10-14
Substrate Glass Soluble PI PET, PEN, PI, Poly-ketone, PC etc
  • a-Si TFT

  • LTPS

  • OTFT

有机半导体薄膜晶体管(OTFT)的工艺流程

OTFT Stacking Structure
Detail Process Surface Treatment S/D Electrode OSC Gate Insulator Gate Electrode Inter layer Dielectric Cathode Electrode
Organic material Coating Spin
Slot Die / Inkjet
PR Coating Spin
Slot Die
DFR
Electrode Vacuum Deposition
Electroless Plating

有机半导体薄膜晶体管(OTFT)工艺流程的优点

// Conventional Photolithography Process (One Layer)

// CLAP’s Organic TFT Process (One Layer)

特点/优点
ㆍEliminate 3 Step (PR Coating, Etching, Strip)
ㆍNo need to use photoresist
ㆍCrosslink的物质不受后续工序影响

有机半导体薄膜晶体管 (OTFT) Flatform

有机半导体薄膜晶体管(OTFT)开发 Roadmap